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| Coad | 671355 | Type | Avalanche Photodiode | |
| Dimension(mm) | 60.0 x 50.0 x 32.0 | Wavelength(nm) | 1000 - 1700 | |
| Bandwidth (MHz) | 400 | Input Method | Free-Space Input | |
| NEP | 1.8pW/√Hz | Rise Time | 1.0ns | |
| Input Interface | - | Photosensitive Area | 230.0um | |
| Responsivity | 0.9A/W@1550nm | Noise Voltage | 20.0mVpp | |
| Gain | 1.8 x 10^5V/W | Maximum Output Amplitude | 3.2V | |
| Saturation Optical Power | 16.7μW | Detector Type | InGaAs photodetector |
LBTEK’s APD Avalanche Photodetectors offer higher sensitivity and lower noise compared to standard PIN photodetectors. They feature an integrated thermistor that allows bias voltage adjustment to compensate for temperature-induced variations in the multiplication factor (M-factor), making them ideal for low optical power applications. In general, avalanche photodiodes (APDs) use an internal gain mechanism to enhance sensitivity by applying a high reverse bias voltage to create a strong electric field. When an incident photon generates an electron-hole pair, the electric field accelerates the electron, causing impact ionization and generating secondary electrons. This electron avalanche produces a gain factor of several hundred, denoted as the multiplication factor M, which is a function of reverse bias voltage and temperature. Typically, the M-factor increases as temperature decreases and decreases as temperature rises. Similarly, the M-factor increases with higher reverse bias voltage and decreases when the reverse bias voltage is lowered.
The LBTEK InGaAs Avalanche Photodetector has a spectral response range of 1000–1700 nm and is available with either fiber input or free-space optical input. It features an integrated thermistor that adjusts the bias voltage across the APD to compensate for temperature-induced variations in the multiplication factor (M-factor), ensuring improved output stability in environments with temperature fluctuations.
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